svf2n60m/f/t/d_datasheet 2a, 600v n-channel mosfet general description svf2n60m/f/t/d is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure dmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withst and high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. features ? 2a,600v,r ds(on)(typ.) =3.7 @v gs =10v ? low gate charge ? low c rss ? fast switching ? improved dv/dt capability nomenclature ordering specifications package type marking material packing part no. svf2n60m to-251-3l svf2n60m pb free tube SVF2N60F to-220f-3l SVF2N60F pb free tube svf2n60t to-220-3l svf2n60t pb free tube svf2n60d to-252-2l svf2n60d pb free tube svf2n60dtr to-252-2l svf2n60d pb free tape & reel hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 1 of 10
svf2n60m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 2 of 10 absolute maximum ratings (t c =25 c unless otherwise noted) rating parameter symbol svf2n60m/d svf2n60t SVF2N60F unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v drain current i d 2.0 a drain current pulsed i dm 8 a 34 44 23 w power dissipation(t c =25 c) -derate above 25 c p d 0.27 0.35 0.18 w/ c single pulsed avalanche energy (note 1) e as 115 mj operation junction temperature t j -55 +150 c storage temperature t stg -55 +150 c thermal characteristics rating parameter symbol svf2n60m/d svf2n60t SVF2N60F unit thermal resistance, junction-to-case r jc 3.7 2.86 5.56 c/w thermal resistance, junction-to-ambient r ja 110 62.5 120 c/w electrical characteristics (t c =25 c unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = vds, i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =1.0a -- 3.7 4.2 input capacitance c iss -- 250.1 -- output capacitance c oss -- 35.7 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 1.1 -- pf turn-on delay time t d(on) -- 9.2 -- turn-on rise time t r -- 23.4 -- turn-off delay time t d(off) -- 15.3 -- turn-off fall time t f v dd =300v,i d =2.0a, r g =25 (note 2,3) -- 20.1 -- ns total gate charge q g -- 5.67 -- gate-source charge q gs -- 1.74 -- gate-drain charge q gd v ds =480v,i d =2.0a, v gs =10v (note 2,3) -- 1.99 -- nc
svf2n60m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 3 of 10 source-drain diode ratings and characteristics parameter symbol test conditions min. typ. max. unit continuous source current i s -- -- 2.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 8.0 a diode forward voltage v sd i s =2.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 230 -- ns reverse recovery charge q rr i s =2.0a,v gs =0v, di f /dt=100a/s -- 1.0 -- c notes: 1. l=30mh, i as =2.52a, v dd =145v, r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature.
svf2n60m/f/t/d_datasheet typical characteristics hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn drain current ? i d (a) drain current ? i d (a) drain-source on-resistance ? r ds(on) (? ) reverse drain current ? i dr (a) capasistance(pf) gate-source voltage? v gs (v) page 4 of 10
svf2n60m/f/t/d_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 5 of 10
svf2n60m/f/t/d_datasheet typical test circuit 12v 50k 300nf same type as dut dut v gs 3ma v ds v gs 10v charge qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 6 of 10
svf2n60m/f/t/d_datasheet package outline to-220-3l unit: mm to-251-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 7 of 10
svf2n60m/f/t/d_datasheet package outline (continued) to-220f-3l(one) unit: mm to-220f-3l(two) unit: mm hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 8 of 10
svf2n60m/f/t/d_datasheet package outline (continued) to-252-2l unit: mm disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 9 of 10
svf2n60m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.21 http://www.silan.com.cn page 10 of 10 attachment revision history date rev description page 2010.09.20 1.0 original 2010.10.21 1.1 modify ?typical characteristics?, ?package outline?, the template of datasheet
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